NGHIÊN CỨU Độ LINH ĐỘNG CỦA HẠT TẢI TRONG KÊNH DẪN GE PHA TẠP ĐIỀU BIẾN PHỤ THUỘC VÀO NHIỆT ĐỘ

Abstract

In this paper we calculate the temperature dependent part o f the hall mobility in Ge channel modulation-doped structures with very high room-temperature. At high temperatures, we were able to derive the autocorrelation functions for the distribution o f carriers and their scattering mechanisms. We incorporate all possible main scattering mechanisms, especially acoustic-phonon scattering. It is shown that surface-roughness and acoustic-phonon scattering play a dominant role in limiting the mobility. We analyzed the behavior o f the mobility fo r temperature values up to 300K. Our theory is able to well reproduce the experimental data about the transport o f holes in Ge channel modulation-doped structures from 5Ơ’K to 30(fK.
Keywords: Mobility, acoustic-phonon scattering, modulation-doping, Ge channel.