CALCULATION OF INTERFACE ROUGHNESS SCATTERING- LIMITED ELECTRON MOBILITIES AT LOW TEMPERATURES IN GaAs AND InAs QUANTUM WELLS

Tóm tắt

In this paper, we present a study of the effects of interface roughness scattering-limited electron mobilities in GaAlAs/GaAs/GaAlAs and InGaSb/InAs/InGaSb quantum wells. We propose that interface roughness-related scatterings are generally key scattering mechanisms at low temperatures in heterostructures, especially thin quantum wells. Roughness is also shown to produce misfit deformation potential and misfit piezoelectric field as scattering sources in strained heterostructures. The analysis of our results clearly indicates that the significance of interface roughness scattering and, in particular, the influence of interface roughness correlation length and height is considerable. A comparison of our calculated results with published experimental data is shown to be in good agreement.
Keywords: Interface roughness, scattering, correlation length, quantum wells, heterostructures.