NGHIÊN CỨU ẢNH HƯỞNG CỦA NỒNG ĐỘ PHA TẠP CARBON LÊN CẤU TRÚC CỦA CÁC MÀNG Mn5Gẻ3 ĐƯỢC CHẾ TẠO TRÊN ĐẾ Ge(lll)

Abstract

y combining the results from the structural analysis o f Reflection High Enegy Electronic Diffraction, High resolution-transmission electron microscopy (HR-TEM) and X-Ray Diffraction, the maximum concentration o f carbon which can be doped into M nsGei film s without changing their structure has been determined to be X - 0.6.
Exceeding this concentration, the film s structure turns into polycrystalline or amorphous corresponding to carbon concentrations X = 0.7 and 0.9. These change due to the fa c t that c at these concentrations has exceeded the perm issible threshold, leading to excess c destroying the film structure.
Keyword: Thin film s, MnsGeỉ, carbon concentration.