KHẢO SÁT Sự PHÁT TRIỂN CỦA MÀNG Ge TRÊN ĐÉ GaAs(lOO) BẰNG PHƯƠNG PHÁP EPITAXY CHÙM PHẨN TỬ

Abstract

etc.), in particular to study the initial stage o f the formation o f the hetero-valence interface in Ge/III-V, in order to obtain high quality Ge films on GaAs substrates with a nearly matched lattice constant. The growth mode o f Ge films during deposited process was investigated by Reflection High Energy Electron Diffraction (RHEED) measurement in MBE chamber. Scanning Tunneling Microscope (STM) was used to study the morphology surface of Ge grown on GaAs(OOl) substrate with two surfaces of GaAs(OOl) prior to growth: the As-rich (2x4) and the Ga-rich (4x2)/(4x6) reconstructions. Beside that, Low Energy Electron Diffraction equipment was used to get more inf ormation about Ge film quality grown on GaAs substrate.
Keywords: Ge/GaAs, surface reconstruction, Molecular Beam Epitaxy, STM, LEED.